Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high- electron-mobility transistors by use of ac transconductance method

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy

A set of different short term stress conditions are applied to AlGaN/GaN high electron mobility transistors and changes in the electronic behaviour of the gate stack and channel region are investigated by simultaneous gate and drain current low frequency noise measurements. Permanent degradation of gate current noise is observed during high gate reverse bias stress which is linked to defect cre...

Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility tra...